Manufacturer Part Number
FDD6N20TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
Designed for high-frequency, high-efficiency switching applications
Optimized for low on-resistance and fast switching
Suitable for use in power supplies, motor drives, and other power conversion applications
Product Advantages
Low on-resistance for low conduction losses
Fast switching for high-frequency operation
Robust design for reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 800mΩ @ 2.3A, 10V
Continuous Drain Current (Id): 4.5A (at 25°C)
Input Capacitance (Ciss): 230pF @ 25V
Power Dissipation (Tc): 40W
Quality and Safety Features
Manufactured using advanced MOSFET technology
Robust and reliable design for long-term performance
Compatibility
Suitable for use in a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Other high-frequency, high-efficiency power switching applications
Product Lifecycle
Current product offering, no discontinuation or replacement planned
Key Reasons to Choose This Product
Low on-resistance for improved efficiency
Fast switching for high-frequency operation
Robust and reliable design for long-term performance
Suitable for a wide range of power conversion and control applications