Manufacturer Part Number
FDB12N50TM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance N-channel power MOSFET for power supply and motor control applications
Product Features and Performance
High voltage rating up to 500V
Low on-resistance of 650mΩ @ 6A, 10V
High continuous drain current of 11.5A at 25°C
Rugged avalanche capability
Low gate charge of 30nC @ 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
High reliability and robustness
Enables compact and lightweight designs
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 650mΩ @ 6A, 10V
Continuous Drain Current (Id): 11.5A @ 25°C
Input Capacitance (Ciss): 1315pF @ 25V
Power Dissipation (Tc): 165W
Quality and Safety Features
Rugged avalanche capability
Excellent thermal performance
Reliable and stable operation
Compatibility
Suitable for a wide range of power supply and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Telecom and server power
Household appliances
Product Lifecycle
This product is currently in active production and available for purchase. There are no known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Robust design with avalanche capability
Compact and lightweight package for space-constrained designs
Suitable for a broad range of power control applications
FDB120N10 MOSAMI Semiconductor/onsemi