Manufacturer Part Number
FDB120N10
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
N-channel configuration
Surface mount DPAK (TO-263) package
Robust PowerTrench design
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage rating of 100V
Low on-resistance (RDS(on)) of 12mΩ
High current handling capability of 74A
Product Advantages
High power density and efficiency
Excellent thermal management
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 74A
On-Resistance (RDS(on)): 12mΩ
Input Capacitance (Ciss): 5605pF
Power Dissipation (PD): 170W
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for surface mount assembly
Compatibility
Suitable for various power electronics applications, including motor drives, power supplies, and switching regulators
Application Areas
Power conversion
Motor control
Industrial electronics
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High power handling and efficiency
Robust and reliable performance
Excellent thermal management
Wide operating temperature range
Surface mount package for easy integration
RoHS3 compliance for environmental friendliness
FDB120N10 MOSAMI Semiconductor/onsemi