Manufacturer Part Number
FDB120N10
Manufacturer
Fairchild (onsemi)
Introduction
High-performance power MOSFET transistor
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 100 V
Maximum gate-to-source voltage (Vgs): ±20 V
Maximum on-resistance (Rds(on)): 12 mΩ @ 74 A, 10 V
Continuous drain current (Id): 74 A @ 25°C (Tc)
Input capacitance (Ciss): 5605 pF @ 25 V
Maximum power dissipation: 170 W (Tc)
N-channel MOSFET
Threshold voltage (Vgs(th)): 4.5 V @ 250 A
Gate charge (Qg): 86 nC @ 10 V
Product Advantages
High current handling capability
Low on-resistance for high efficiency
Wide temperature range operation
Robust and reliable performance
Key Technical Parameters
Transistor type: MOSFET
Technology: PowerTrench
Mounting type: Surface mount
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Quality and Safety Features
Meets industrial-grade quality and safety standards
Compatibility
Suitable for a wide range of power supply, motor control, and other high-power applications
Application Areas
Power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Excellent performance characteristics for high-power applications
Robust and reliable operation across a wide temperature range
Efficient power conversion with low on-resistance
Suitable for a variety of industrial and automotive applications
FDB120N10 MOSAMI Semiconductor/onsemi