Manufacturer Part Number
FDB110N15A
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET optimized for high-frequency, high-efficiency power conversion applications.
Product Features and Performance
High-performance MOSFET with low on-resistance (RDS(on)) and fast switching
Optimized for high-frequency, high-efficiency power conversion applications
Excellent body diode characteristics with low diode forward voltage
Robust avalanche capability
Fast switching and high-frequency operation
High power density
Product Advantages
Improved efficiency in power conversion applications
Reduced power losses and heat generation
Reliable and robust performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 150 V
On-Resistance (RDS(on)): 11 mΩ @ 92 A, 10 V
Continuous Drain Current (ID): 92 A @ 25°C
Power Dissipation (Pd): 234 W @ 25°C
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
Reliable and robust construction
Designed for high-quality and safe operation
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
Telecoms and industrial equipment
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-efficiency power conversion with low power losses
Reliable and robust performance
Optimized for high-frequency, high-efficiency applications
Excellent thermal management and power handling capabilities
Compatibility with a wide range of power conversion applications
FDB120N10 MOSAMI Semiconductor/onsemi