Manufacturer Part Number
MMBT5551-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Automotive and AEC-Q101 qualified
Operating Temperature: -55°C to 150°C
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 160 V
Collector Current: 600 mA
Collector Cutoff Current: 500 nA
Collector-Emitter Saturation Voltage: 200 mV
DC Current Gain: 80 (min)
Transition Frequency: 300 MHz
Product Advantages
Robust and reliable performance
Suitable for automotive and industrial applications
Wide operating temperature range
High breakdown voltage and current capabilities
Key Technical Parameters
Transistor Type: NPN
Mounting Type: Surface Mount
Package: SOT-23-3
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive reliability
Compatibility
Compatible with various electronic circuit designs requiring a high-performance NPN transistor
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Amplifiers
Switches
Product Lifecycle
This product is an active and widely available component
Replacements and upgrades may be available from the manufacturer or other suppliers
Key Reasons to Choose
Robust and reliable performance across a wide temperature range
High breakdown voltage and current capabilities
Automotive and industrial qualification for demanding applications
Small surface mount package for space-constrained designs