MMBT5550LT1G - onsemi

Manufacturer Part Number

MMBT5550LT1G

Manufacturer

onsemi

Introduction

This device is a high-voltage NPN bipolar junction transistor (BJT) suitable for general-purpose amplifier and switch applications.

Product Features and Performance

Operates at high voltages up to 140V

Handles collector currents up to 600mA

Provides high DC current gain of at least 60

Low collector-emitter saturation voltage of 250mV at 50mA collector current

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust and reliable performance

Suitable for a variety of applications

Compact surface-mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 140 V

Current Collector (Ic) (Max): 600 mA

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V

Quality and Safety Features

RoHS3 compliant

Meets industrial-grade quality and reliability standards

Compatibility

Compatible with TO-236-3, SC-59, and SOT-23-3 package footprints

Can be used in surface-mount applications

Application Areas

General-purpose amplifier and switch circuits

Automotive electronics

Industrial control systems

Consumer electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation

Replacement or upgraded models may become available in the future as technology advances

Key Reasons to Choose This Product

High voltage and current handling capabilities

Excellent DC current gain and low saturation voltage

Wide operating temperature range

Compact and reliable surface-mount package

Compliance with RoHS3 regulations

Suitability for a wide range of applications