MMBT5401LT1G - onsemi

Manufacturer Part Number

MMBT5401LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Transistors

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

High-performance PNP bipolar transistor

Optimized for high-speed switching and amplification applications

Wide collector-emitter breakdown voltage up to 150V

Low collector-emitter saturation voltage

High current gain and transition frequency up to 300MHz

Product Advantages

Robust and reliable performance

Compact surface-mount package (SOT-23-3)

Excellent thermal management

RoHS compliant

Key Technical Parameters

Power Dissipation: 300mW

Collector-Emitter Breakdown Voltage: 150V

Collector Current (Max): 500mA

Collector Cutoff Current: 50nA

Collector-Emitter Saturation Voltage: 500mV @ 5mA, 50mA

Current Gain (hFE): Minimum 60 @ 10mA, 5V

Transition Frequency: 300MHz

Quality and Safety Features

RoHS3 compliant

Tin-plated leads for reliable soldering

Compatibility

Compatible with various electronic circuits and equipment

Suitable for high-speed switching and amplification applications

Application Areas

Switching and amplifier circuits

Power supplies

Telecommunication equipment

Industrial control systems

Consumer electronics

Product Lifecycle

Currently in active production

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent high-voltage and high-speed performance

Compact and efficient surface-mount packaging

Robust and reliable operation across a wide temperature range (-55°C to 150°C)

RoHS compliance for environmentally-friendly use

Availability of replacement and upgrade options