Manufacturer Part Number
MMBT5401LT3G
Manufacturer
onsemi
Introduction
High-performance PNP bipolar junction transistor (BJT)
Suitable for a wide range of amplifier and switching applications
Product Features and Performance
Wide collector-emitter breakdown voltage of 150V
Low collector-emitter saturation voltage of 500mV @ 5mA, 50mA
High current gain (hFE) of 60 min. @ 10mA, 5V
High transition frequency of 300MHz
Compact SOT-23-3 surface mount package
Product Advantages
Excellent electrical characteristics for amplifier and switching applications
Compact size for space-constrained designs
High reliability and long lifespan
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 150V
Collector Current (IC): 500mA
Collector Cutoff Current (ICBO): 50nA
DC Current Gain (hFE): 60 min. @ 10mA, 5V
Transition Frequency (fT): 300MHz
Power Dissipation: 300mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of analog and digital circuit applications
Application Areas
Amplifiers
Switches
Drivers
Logic gates
General-purpose analog and digital circuits
Product Lifecycle
This product is an active and widely available part.
No known plans for discontinuation or replacement.
Key Reasons to Choose This Product
Excellent electrical performance for a wide range of applications
Compact and space-efficient surface mount package
High reliability and long lifespan
RoHS3 compliance for environmental friendliness
Broad compatibility and suitability for many circuit designs