MMBT5401LT3G - onsemi

Manufacturer Part Number

MMBT5401LT3G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT)

Suitable for a wide range of amplifier and switching applications

Product Features and Performance

Wide collector-emitter breakdown voltage of 150V

Low collector-emitter saturation voltage of 500mV @ 5mA, 50mA

High current gain (hFE) of 60 min. @ 10mA, 5V

High transition frequency of 300MHz

Compact SOT-23-3 surface mount package

Product Advantages

Excellent electrical characteristics for amplifier and switching applications

Compact size for space-constrained designs

High reliability and long lifespan

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 150V

Collector Current (IC): 500mA

Collector Cutoff Current (ICBO): 50nA

DC Current Gain (hFE): 60 min. @ 10mA, 5V

Transition Frequency (fT): 300MHz

Power Dissipation: 300mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of analog and digital circuit applications

Application Areas

Amplifiers

Switches

Drivers

Logic gates

General-purpose analog and digital circuits

Product Lifecycle

This product is an active and widely available part.

No known plans for discontinuation or replacement.

Key Reasons to Choose This Product

Excellent electrical performance for a wide range of applications

Compact and space-efficient surface mount package

High reliability and long lifespan

RoHS3 compliance for environmental friendliness

Broad compatibility and suitability for many circuit designs