MMBT5551M3T5G - onsemi

Manufacturer Part Number

MMBT5551M3T5G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN bipolar junction transistor (BJT) for general-purpose switching and amplification applications.

Product Features and Performance

High voltage rating up to 160V

High collector current rating up to 60mA

Low collector-emitter saturation voltage

Wide operating temperature range of -55°C to 150°C

Compact SOT-723 surface-mount package

Product Advantages

Reliable and robust performance

Suitable for high-voltage, high-current applications

Efficient heat dissipation in small package

Wide temperature range for diverse operating conditions

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 160V

Collector Current (IC): 60mA

Collector-Emitter Saturation Voltage (VCE(sat)): 200mV @ 5mA, 50mA

DC Current Gain (hFE): 80 @ 10mA, 5V

Quality and Safety Features

RoHS3 compliant

Suitable for tape-and-reel packaging

Compatibility

Suitable for surface-mount applications

Application Areas

General-purpose switching and amplification circuits

Power supplies, motor controls, and other industrial applications

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

High voltage and current ratings for demanding applications

Efficient thermal performance in compact package

Reliable and robust operation over wide temperature range

RoHS compliance for environmentally-friendly use