Manufacturer Part Number
MMBT5551LT1G
Manufacturer
onsemi
Introduction
High voltage, high current NPN silicon bipolar junction transistor
Suitable for general purpose switching and amplifier applications
Product Features and Performance
High voltage capability up to 160V
High collector current up to 600mA
Low collector-emitter saturation voltage
High DC current gain of at least 80
Product Advantages
Reliable performance
Compact surface mount package
Suitable for high power and high voltage applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 160V
Current Collector (Ic) (Max): 600mA
Current Collector Cutoff (Max): 100nA
Vce Saturation (Max): 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min): 80 @ 10mA, 5V
Quality and Safety Features
RoHS3 compliant
Reliable performance in wide temperature range of -55°C to 150°C
Compatibility
Suitable for surface mount applications
Package: SOT-23-3 (TO-236)
Application Areas
General purpose switching and amplifier circuits
Power supplies
Telecommunications equipment
Industrial control systems
Product Lifecycle
This product is an active and widely used device
Replacement or upgraded options are available if needed
Several Key Reasons to Choose This Product
High voltage and high current capability
Compact surface mount package
Reliable performance across wide temperature range
High DC current gain for efficient amplification
RoHS3 compliant for environmental safety
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