MMBT5551LT1G - onsemi

Manufacturer Part Number

MMBT5551LT1G

Manufacturer

onsemi

Introduction

High voltage, high current NPN silicon bipolar junction transistor

Suitable for general purpose switching and amplifier applications

Product Features and Performance

High voltage capability up to 160V

High collector current up to 600mA

Low collector-emitter saturation voltage

High DC current gain of at least 80

Product Advantages

Reliable performance

Compact surface mount package

Suitable for high power and high voltage applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 160V

Current Collector (Ic) (Max): 600mA

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max): 200mV @ 5mA, 50mA

DC Current Gain (hFE) (Min): 80 @ 10mA, 5V

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range of -55°C to 150°C

Compatibility

Suitable for surface mount applications

Package: SOT-23-3 (TO-236)

Application Areas

General purpose switching and amplifier circuits

Power supplies

Telecommunications equipment

Industrial control systems

Product Lifecycle

This product is an active and widely used device

Replacement or upgraded options are available if needed

Several Key Reasons to Choose This Product

High voltage and high current capability

Compact surface mount package

Reliable performance across wide temperature range

High DC current gain for efficient amplification

RoHS3 compliant for environmental safety