Manufacturer Part Number
FZT855TA
Manufacturer
Diodes Incorporated
Introduction
High voltage, high current NPN silicon bipolar transistor
Product Features and Performance
High voltage capability up to 150V
High current handling up to 5A
High power rating up to 3W
High frequency performance up to 90MHz
High current gain of 100 minimum at 1A, 5V
Product Advantages
Suitable for high power, high voltage switching and amplifier applications
Compact surface mount package for efficient board space utilization
Reliable and robust performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 150V
Collector Current (max): 5A
Collector Power Dissipation (max): 3W
Current Gain (min): 100 @ 1A, 5V
Transition Frequency: 90MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Reliable performance over wide temperature range of -55°C to 150°C
Compatibility
Compatible with standard TO-261-4, TO-261AA package footprints
Suitable for tape and reel packaging
Application Areas
High power switching
Amplifier circuits
Power management
Industrial control
Automotive electronics
Product Lifecycle
Currently in active production
No discontinuation plans identified
Replacement or upgrade options available if required
Key Reasons to Choose This Product
High voltage and current handling capability
Compact surface mount package for space-constrained designs
Excellent frequency performance for high-speed applications
Reliable and robust operation over wide temperature range
RoHS3 compliance for environmentally-conscious designs
