Manufacturer Part Number
FZT949TA
Manufacturer
Diodes Incorporated
Introduction
High-power PNP bipolar junction transistor for general-purpose applications
Product Features and Performance
High power handling capability up to 3W
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage of 440mV @ 500mA, 5.5A
High DC current gain of 100 @ 1A, 1V
High transition frequency of 100MHz
Compact SOT-223-3 surface mount package
Product Advantages
Excellent power handling capacity
Wide operating temperature range
Low saturation voltage for efficient power conversion
High current gain and transition frequency for fast switching
Key Technical Parameters
Power Rating: 3W
Operating Temperature: -55°C to 150°C
Collector-Emitter Breakdown Voltage: 30V
Collector Current (Max): 5.5A
Collector Cutoff Current: 50nA
DC Current Gain: 100 @ 1A, 1V
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in various applications
Compatibility
Suitable for a wide range of general-purpose electronic circuits and power conversion applications
Application Areas
Power amplifiers
Switches
Regulators
Motor drives
Industrial controls
Product Lifecycle
This product is currently in active production and widely available
No known plans for discontinuation or upgrades at this time
Key Reasons to Choose This Product
Excellent power handling capability up to 3W
Wide operating temperature range for reliable performance
Low saturation voltage for efficient power conversion
High current gain and transition frequency for fast switching
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental responsibility
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