Manufacturer Part Number
FZT853TA
Manufacturer
Diodes Incorporated
Introduction
High voltage, high current NPN silicon power transistor
Product Features and Performance
Designed for high voltage, high current switching and amplifier applications
Capable of handling up to 100V collector-emitter voltage and 6A collector current
Transition frequency of 130MHz for high-speed switching
Low collector-emitter saturation voltage for efficient power conversion
Product Advantages
Excellent power handling capability
High switching speed
Low power losses
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Power rating: 3W
Collector-emitter breakdown voltage: 100V
Collector current: 6A
Current gain: 100 (min) at 2A, 2V
Collector-emitter saturation voltage: 340mV @ 500mA, 5A
Quality and Safety Features
RoHS3 compliant
Packaged in industry-standard SOT-223-3 surface mount package
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Power amplifiers
Motor drives
Switching power supplies
Industrial controls
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement/upgrade options available from Diodes Incorporated
Key Reasons to Choose This Product
Excellent power handling and efficiency
High switching speed for fast, responsive power control
Compact surface mount package for space-constrained designs
Reliable performance backed by Diodes Incorporated quality
