Manufacturer Part Number
FZT851TA
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN bipolar junction transistor (BJT)
Designed for use in various power amplifier and switching applications
Product Features and Performance
Capable of handling up to 6A of collector current
Supports a maximum collector-emitter breakdown voltage of 60V
Features a typical transition frequency of 130MHz
Provides a minimum DC current gain (hFE) of 100 at 2A, 1V
Product Advantages
Robust and reliable performance
Suitable for a wide range of power electronic applications
Efficient heat dissipation with surface mount package
Key Technical Parameters
Power Rating: 3W
Operating Temperature Range: -55°C to 150°C
Collector-Emitter Saturation Voltage (Vce(sat)): 375mV @ 300mA, 6A
Collector Cutoff Current (ICBO): 50nA (max)
Quality and Safety Features
RoHS3 compliant
Adheres to strict manufacturing and quality standards
Compatibility
Compatible with various surface mount packages, including TO-261-4 and TO-261AA
Application Areas
Power amplifiers
Switching circuits
Power supplies
Motor drives
Industrial electronics
Product Lifecycle
Actively supported by the manufacturer
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Robust and reliable performance in high-power applications
Efficient heat dissipation with surface mount package
Wide operating temperature range
Compliance with RoHS regulations for environmental sustainability
Backed by the expertise and quality standards of Diodes Incorporated
