Manufacturer Part Number
FZT792ATA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT) suitable for power amplifier and switching applications.
Product Features and Performance
Operates at high frequency up to 160MHz
Handles high collector current up to 2A
Supports high collector-emitter breakdown voltage up to 70V
Provides high DC current gain of 300 minimum
Low collector-emitter saturation voltage of 500mV at 2A collector current
Product Advantages
Efficient power handling capability
High switching speed and bandwidth
Robust ESD protection
Reliable performance in harsh environments
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Power rating: 2W
Collector-emitter breakdown voltage: 70V
Collector current: 2A
DC current gain: 300 minimum
Transition frequency: 160MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in tape and reel packaging
Compatibility
TO-261-4, TO-261AA package compatibility
Surface mount design for compact integration
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
Currently available product
No plans for discontinuation
Replacement/upgrade options may be available in the future
Key Reasons to Choose
High-performance power handling
Fast switching capability
Robust design for reliable operation
Compact surface mount package
RoHS3 compliance for environmentally-conscious applications
