Manufacturer Part Number
FMMT717TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
ROHS3 Compliant
SOT-23-3 Package
Operating Temperature Range: -55°C to 150°C
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage: 12 V (Max)
Collector Current: 2.5 A (Max)
Collector Cutoff Current: 100 nA (Max)
Collector-Emitter Saturation Voltage: 220 mV @ 50 mA, 2.5 A
DC Current Gain: 300 (Min) @ 100 mA, 2 V
Transition Frequency: 110 MHz
Surface Mount Mounting Type
Product Advantages
Compact SOT-23-3 package
Wide operating temperature range
High current and power handling capability
High DC current gain
Key Technical Parameters
Power Rating
Collector-Emitter Breakdown Voltage
Collector Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring a PNP bipolar transistor
Application Areas
Amplifiers
Switches
Voltage regulators
Driver circuits
General-purpose electronics
Product Lifecycle
Current production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling and high current capability
High DC current gain for efficient amplification
Wide operating temperature range for reliability
Compact SOT-23-3 package for space-constrained designs
ROHS3 compliance for environmental responsibility