Manufacturer Part Number
FMMT634QTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
Operating Temperature: -55°C to 150°C
Power Rating: 806 mW
Collector-Emitter Breakdown Voltage: 100 V
Collector Current (Max): 900 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 960 mV @ 5 mA, 1 A
Transistor Type: NPN Darlington
DC Current Gain (hFE): 20,000 min. @ 100 mA, 5 V
Transition Frequency: 140 MHz
Surface Mount Packaging
Product Advantages
High current gain
High power handling capability
Wide operating temperature range
RoHS3 compliant
Key Technical Parameters
Power Rating
Breakdown Voltage
Maximum Collector Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Quality and Safety Features
RoHS3 Compliant
Meets environmental and safety standards
Compatibility
Surface mount package compatible with standard PCB assembly processes
Application Areas
Amplifier circuits
Switching circuits
Power management
Relay and motor control
Product Lifecycle
Current production model, no discontinuation planned
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High current gain and power handling capability
Wide operating temperature range
RoHS3 compliance for environmental friendliness
Surface mount packaging for efficient PCB integration
Reliable performance and quality
FMMT717 TAZETEX
FMMT634QDiodes Incorporated