FMMT6517TA - Diodes Incorporated

Manufacturer Part Number

FMMT6517TA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 Package

Operating Temperature Range: -55°C to 150°C

Power Rating: 330 mW

Collector-Emitter Breakdown Voltage: 350 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage: 1 V @ 5 mA, 50 mA

DC Current Gain (hFE): Minimum 20 @ 50 mA, 10 V

Transition Frequency: 50 MHz

Product Advantages

High Voltage Rating

Low Collector Cutoff Current

Good Saturation Characteristics

Surface Mount Packaging

Key Technical Parameters

Transistor Type: NPN

Package: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a variety of electronic circuit designs requiring high voltage, low leakage, and high-frequency NPN transistors

Application Areas

Switching circuits

Amplifier circuits

Logic circuits

Power supplies

Product Lifecycle

Current production, no known discontinuation plans

Replacements and upgrades available from the manufacturer

Key Reasons to Choose This Product

High voltage rating up to 350 V

Low collector cutoff current of 50 nA

Excellent saturation characteristics

Suitable for high-frequency applications up to 50 MHz

Small surface mount packaging for compact designs

RoHS3 compliance for environmentally-friendly use