Manufacturer Part Number
FMMT625TA
Manufacturer
Diodes Incorporated
Introduction
Discrete semiconductor product
Single bipolar junction transistor (BJT)
NPN transistor
Product Features and Performance
Power rating: 625 mW
Collector-Emitter Breakdown Voltage: 150 V max
Collector Current: 1 A max
Collector Cutoff Current: 100 nA max
Collector-Emitter Saturation Voltage: 300 mV max @ 50 mA, 1 A
DC Current Gain (hFE): 300 min @ 200 mA, 10 V
Transition Frequency: 135 MHz
Product Advantages
High voltage and current handling capabilities
Low saturation voltage for efficient switching
Wide operating temperature range: -55°C to 150°C
Key Technical Parameters
Package: SOT-23-3
Mounting Type: Surface Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Compliant with RoHS3 directive
Compatibility
Compatible with various electronic circuit designs requiring a high-performance NPN bipolar transistor
Application Areas
Suitable for use in power amplifiers, switches, and other electronic circuits
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low saturation voltage for efficient switching
Wide operating temperature range
Small surface-mount package
RoHS3 compliant
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