Manufacturer Part Number
DMT10H010LSS-13
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
N-Channel
100V Drain-Source Voltage
±20V Gate-Source Voltage
5mΩ maximum On-Resistance at 13A, 10V
5A continuous Drain Current at 25°C (Ta)
5A continuous Drain Current at 25°C (Tc)
3000pF maximum Input Capacitance at 50V
4W maximum Power Dissipation at 25°C (Ta)
-55°C to 150°C Operating Temperature Range
Product Advantages
High efficiency
Low on-resistance
High current capability
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.5mΩ @ 13A, 10V
Drain Current (Id): 11.5A (Ta), 29.5A (Tc)
Input Capacitance (Ciss): 3000pF @ 50V
Power Dissipation (Pd): 1.4W (Ta)
Gate Charge (Qg): 71nC @ 10V
Quality and Safety Features
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Compatible with surface mount applications
Application Areas
Power management
Motor control
Switching power supplies
Amplifiers
Industrial electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power savings
High current capability for demanding applications
Compact surface mount package for space-constrained designs
Wide operating temperature range for reliable performance in various environments
RoHS3 compliance for environmental responsibility
