Manufacturer Part Number
DMT10H009SPS-13
Manufacturer
Diodes Incorporated
Introduction
The DMT10H009SPS-13 is a high-performance N-channel MOSFET from Diodes Incorporated, designed for a wide range of power electronics applications.
Product Features and Performance
100V drain-to-source voltage rating
5mΩ maximum on-resistance at 20A and 10V
14A continuous drain current at 25°C ambient
80A continuous drain current at 25°C case temperature
Low gate charge of 30nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current capability
Wide operating temperature range
Suitable for high-speed and high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.5mΩ @ 20A, 10V
Continuous Drain Current (Id): 14A (Ta), 80A (Tc)
Input Capacitance (Ciss): 2085pF @ 50V
Power Dissipation (Pd): 1.3W (Ta)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Suitable for industrial and automotive applications
Compatibility
Surface mount package (PowerDI5060-8)
Suitable for automatic assembly processes
Application Areas
Switching power supplies
Motor drives
Battery management systems
Solar inverters
Industrial automation and control
Product Lifecycle
This product is currently in production and available
No information on upcoming discontinuation or replacement
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Ability to handle high currents and withstand high voltages
Wide operating temperature range for versatile applications
Reliable and robust design for industrial and automotive use
Compatibility with surface mount assembly processes