DMT10H015LFG-13 - Diodes Incorporated

Manufacturer Part Number

DMT10H015LFG-13

Manufacturer

Diodes Incorporated

Introduction

High-performance N-Channel power MOSFET designed for a wide range of power applications.

Product Features and Performance

100V Drain-Source Voltage (Vdss)

5mOhm On-Resistance (Rds(on)) at 10V Gate-Source Voltage (Vgs)

10A Continuous Drain Current (Id) at 25°C

42A Continuous Drain Current (Id) at 25°C case temperature

2W Power Dissipation at 25°C ambient temperature

35W Power Dissipation at 25°C case temperature

Fast switching performance

Product Advantages

Optimized for high-efficiency power conversion

Excellent thermal and electrical characteristics

Compact POWERDI3333-8 package

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 13.5mOhm

Continuous Drain Current (Id): 10A (Ta), 42A (Tc)

Input Capacitance (Ciss): 1871pF

Power Dissipation: 2W (Ta), 35W (Tc)

Quality and Safety Features

RoHS3 compliant

Meets stringent quality and reliability standards

Compatibility

Can be used in a wide range of power conversion and control applications.

Application Areas

Switch-mode power supplies

Motor drives

Lighting ballasts

Industrial and consumer electronics

Product Lifecycle

Currently available, no discontinuation plans known.

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact size and surface mount package

Robust design for reliability in harsh environments

Comprehensive technical support from Diodes Incorporated