Manufacturer Part Number
DMT10H010LPS-13
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
100V drain-source voltage rating
5mΩ maximum on-resistance at 13A, 10V
4A continuous drain current at 25°C ambient
98A continuous drain current at 25°C case
3000pF maximum input capacitance at 50V
2W power dissipation at 25°C ambient
139W power dissipation at 25°C case
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact PowerDI5060-8 package
Suitable for high-frequency and high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.5mΩ @ 13A, 10V
Drain Current (Id): 9.4A (Ta), 98A (Tc)
Input Capacitance (Ciss): 3000pF @ 50V
Power Dissipation: 1.2W (Ta), 139W (Tc)
Quality and Safety Features
RoHS3 compliant
Operates within -55°C to 150°C junction temperature range
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
High-frequency power conversion
Motor drives
Battery management systems
DC-DC converters
Switched-mode power supplies
Product Lifecycle
Currently in production
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance-to-size ratio with low on-resistance
High current handling and power dissipation capabilities
Compact and efficient PowerDI5060-8 package
Suitable for a wide range of high-frequency, high-power applications
Reliable operation within the specified temperature range
RoHS3 compliance for environmentally-friendly use