DMT10H010LPS-13 - Diodes Incorporated

Manufacturer Part Number

DMT10H010LPS-13

Manufacturer

Diodes Incorporated

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

100V drain-source voltage rating

5mΩ maximum on-resistance at 13A, 10V

4A continuous drain current at 25°C ambient

98A continuous drain current at 25°C case

3000pF maximum input capacitance at 50V

2W power dissipation at 25°C ambient

139W power dissipation at 25°C case

Product Advantages

Low on-resistance for high efficiency

High current handling capability

Compact PowerDI5060-8 package

Suitable for high-frequency and high-power applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 9.5mΩ @ 13A, 10V

Drain Current (Id): 9.4A (Ta), 98A (Tc)

Input Capacitance (Ciss): 3000pF @ 50V

Power Dissipation: 1.2W (Ta), 139W (Tc)

Quality and Safety Features

RoHS3 compliant

Operates within -55°C to 150°C junction temperature range

Compatibility

Compatible with standard MOSFET gate drive circuits

Application Areas

High-frequency power conversion

Motor drives

Battery management systems

DC-DC converters

Switched-mode power supplies

Product Lifecycle

Currently in production

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent performance-to-size ratio with low on-resistance

High current handling and power dissipation capabilities

Compact and efficient PowerDI5060-8 package

Suitable for a wide range of high-frequency, high-power applications

Reliable operation within the specified temperature range

RoHS3 compliance for environmentally-friendly use