DMN3190LDW-7 - Diodes Incorporated

Manufacturer Part Number

DMN3190LDW-7

Manufacturer

Diodes Incorporated

Introduction

Dual N-channel MOSFET transistor

Product Features and Performance

30V Drain to Source Voltage

190mΩ Maximum On-Resistance

1A Continuous Drain Current

87pF Maximum Input Capacitance

8V Maximum Gate Threshold Voltage

2nC Maximum Gate Charge

Logic Level Gate

Wide Operating Temperature Range (-55°C to 150°C)

Product Advantages

Compact SOT-363 (6-TSSOP) package

Efficient power handling

Suitable for high-frequency switching applications

Reliable performance over wide temperature range

Key Technical Parameters

Drain to Source Voltage: 30V

On-Resistance: 190mΩ

Drain Current: 1A

Input Capacitance: 87pF

Gate Threshold Voltage: 2.8V

Gate Charge: 2nC

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a variety of electronic systems and circuits requiring high-performance dual N-channel MOSFET transistors.

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

Industrial and consumer electronic equipment

Product Lifecycle

Currently in production. No indication of discontinuation. Replacements and upgrades may be available.

Several Key Reasons to Choose This Product

Efficient power handling with low on-resistance

Compact and space-saving package

Wide operating temperature range

Reliable performance for high-frequency switching applications

RoHS3 compliance for environmentally-conscious designs