Manufacturer Part Number
DMN3135LVT-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel Logic Level MOSFET
Product Features and Performance
Dual N-Channel MOSFET
Logic Level Gate
Low On-Resistance
High Current Capability
Product Advantages
Efficient power conversion
Suitable for high-power switching applications
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Current Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Vgs(th) (Max) @ Id: 2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET technology
Robust package design
Compatibility
Suitable for surface mount applications
Compatible with a variety of electronic systems and circuits
Application Areas
Power management circuits
Switching power supplies
Motor control applications
Lighting control systems
Product Lifecycle
Currently available
No plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and durable design
Suitable for a wide range of high-power applications
Cost-effective solution for power management needs
Easy integration into various electronic systems