Manufacturer Part Number
DMN3150L-7
Manufacturer
Diodes Incorporated
Introduction
The DMN3150L-7 is a N-channel MOSFET transistor from Diodes Incorporated.
Product Features and Performance
28V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
85mΩ On-Resistance (Rds(on)) at 3.6A, 4.5V
8A Continuous Drain Current (Id) at 25°C
305pF Input Capacitance (Ciss) at 5V
4W Power Dissipation (Pd) at 25°C
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Surface mount package for compact designs
RoHS3 compliant for environmental responsibility
Key Technical Parameters
MOSFET technology
N-channel FET type
4V Gate Threshold Voltage (Vgs(th)) at 250μA
5V to 10V drive voltage range
Quality and Safety Features
RoHS3 compliant
Thermally efficient SOT-23-3 package
Compatibility
Suitable for a variety of power switching and control applications
Application Areas
Power management circuits
Motor control
Switching power supplies
General purpose switching
Product Lifecycle
Current production part
Replacements and upgrades may be available in the future
Key Reasons to Choose
Excellent on-resistance performance for efficient power handling
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly use
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