Manufacturer Part Number
DMN32D2LDF-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-channel MOSFET in SOT-353 package
Product Features and Performance
30V drain-to-source voltage
2Ω maximum on-resistance at 100mA, 4V
400mA continuous drain current at 25°C
39pF maximum input capacitance at 3V
Logic level gate
Product Advantages
Compact SOT-353 package
Low on-resistance
High drain current capability
Logic level gate drive
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 1.2Ω @ 100mA, 4V
Drain Current (Id): 400mA @ 25°C
Input Capacitance (Ciss): 39pF @ 3V
Gate Threshold Voltage (Vgs(th)): 1.2V @ 250μA
Quality and Safety Features
RoHS3 compliant
Meets industrial temperature range of -55°C to 150°C
Compatibility
Surface mount SOT-353 package
Application Areas
General purpose switching and amplification
Power management
Load switching
Battery-powered devices
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Compact size with high performance
Low on-resistance for efficient power switching
High drain current capability
Logic level gate drive for easy interfacing
Wide temperature range for industrial applications
RoHS3 compliance for environmentally-friendly design