DMG6968U-7 - Diodes Incorporated

Manufacturer Part Number

DMG6968U-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel enhancement-mode field-effect transistor (MOSFET) in a SOT-23-3 package

Product Features and Performance

Continuous drain current (ID) of 6.5A at 25°C

Low on-resistance (RDS(on)) of 25mΩ at VGS = 4.5V

Input capacitance (Ciss) of 151pF at VDS = 10V

Power dissipation of 1.3W at 25°C

Operating temperature range of -55°C to 150°C

Product Advantages

Compact SOT-23-3 package

Low on-resistance for efficient power switching

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 20V

Gate-to-Source Voltage (VGS): ±12V

Threshold Voltage (VGS(th)): 900mV at ID = 250μA

Drive Voltage (Max RDS(on), Min RDS(on)): 1.8V, 4.5V

Gate Charge (Qg): 8.5nC at VGS = 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a wide range of electronic devices and circuits that require a high-performance N-channel MOSFET.

Application Areas

Switching power supplies

Motor drives

Battery management systems

Automotive electronics

General-purpose power switching applications

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgraded products may be available in the future.

Key Reasons to Choose This Product

High continuous drain current (6.5A) for efficient power switching

Low on-resistance (25mΩ) for low power loss

Compact SOT-23-3 package for space-constrained designs

Wide operating temperature range (-55°C to 150°C)

RoHS3 compliance for environmentally-friendly applications

Suitability for a broad range of power switching applications