DMG6602SVTQ-7 - Diodes Incorporated

Manufacturer Part Number

DMG6602SVTQ-7

Manufacturer

Diodes Incorporated

Introduction

High Performance Dual N-Channel and P-Channel MOSFET Array

Product Features and Performance

N and P-Channel MOSFET Array

Low Rds(on) for high efficiency

Fast switching speed

Low input capacitance

High current handling capability

Wide operating temperature range (-55°C to 150°C)

Product Advantages

Compact TSOT-26 package for space-saving designs

Optimized for power management and switching applications

Robust performance across temperature extremes

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds(on) (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V

Current Continuous Drain (Id) @ 25°C: 3.4A, 2.8A

Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V

Vgs(th) (Max) @ Id: 2.3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V

Quality and Safety Features

RoHS3 compliant

Designed for reliable, long-term performance

Compatibility

Surface mount TSOT-26 package

Application Areas

Power management circuits

Switching applications

Portable electronics

Industrial equipment

Product Lifecycle

Current product offering, no indication of discontinuation

Replacement or upgrade options available from Diodes Incorporated

Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power conversion

Fast switching speed and low input capacitance for high-frequency applications

Wide operating temperature range for use in harsh environments

Compact TSOT-26 package for space-constrained designs

Robust, reliable performance backed by Diodes Incorporated quality