DMG6601LVT-7 - Diodes Incorporated

Manufacturer Part Number

DMG6601LVT-7

Manufacturer

Diodes Incorporated

Introduction

High-performance dual N and P-channel MOSFET array in a compact TSOT-26 package

Product Features and Performance

Dual N and P-channel MOSFET array

Logic level gate drive

Low on-resistance

High current capability

Low input capacitance

Wide operating temperature range (-55°C to 150°C)

Compact TSOT-26 package

Product Advantages

Efficient power management in small form factor

Improved system reliability and performance

Simplified circuit design

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

RDS(ON) (max): 55mΩ @ 3.4A, 10V

Continuous Drain Current (ID): 3.8A (N-channel), 2.5A (P-channel)

Input Capacitance (Ciss): 422pF @ 15V

Gate Charge (Qg): 12.3nC @ 10V

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of applications, including power management, motor control, and general-purpose switching

Application Areas

Power management

Motor control

General-purpose switching

Product Lifecycle

Current product, no plans for discontinuation

Availability of replacement and upgrade options

Key Reasons to Choose This Product

High performance and reliability in a compact package

Efficient power management for improved system efficiency

Simplified circuit design and reduced component count

Wide operating temperature range for versatile applications

Compliance with industry standards for quality and safety