Manufacturer Part Number
DMG6602SVT-7
Manufacturer
Diodes Incorporated
Introduction
The DMG6602SVT-7 is a dual N-Channel and P-Channel MOSFET transistor array in a compact TSOT-26 package.
Product Features and Performance
N and P-Channel MOSFET configuration
30V drain-to-source voltage (Vdss)
60mOhm maximum on-resistance (Rds(on)) at 3.1A, 10V
4A and 2.8A continuous drain current (Id) at 25°C for N-Channel and P-Channel respectively
400pF maximum input capacitance (Ciss) at 15V
Logic level gate with 4.5V drive
3V maximum gate-to-source threshold voltage (Vgs(th)) at 250μA
13nC maximum gate charge (Qg) at 10V
Product Advantages
Compact TSOT-26 package
Suitable for space-constrained applications
Efficient power management
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 60mOhm @ 3.1A, 10V
Continuous Drain Current (Id): 3.4A (N-Channel), 2.8A (P-Channel) at 25°C
Input Capacitance (Ciss): 400pF @ 15V
Gate-to-Source Threshold Voltage (Vgs(th)): 2.3V @ 250μA
Gate Charge (Qg): 13nC @ 10V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power management circuits
Motor control
Lighting control
General purpose switching
Product Lifecycle
This product is currently in production and there are no plans for discontinuation.
Replacement or upgraded products may become available in the future as technology advances.
Key Reasons to Choose This Product
Compact TSOT-26 package for space-constrained applications
Efficient power management with low on-resistance and high continuous drain current
Reliable performance over a wide temperature range
RoHS3 compliance for environmental sustainability
Suitable for a variety of power management and control applications