Manufacturer Part Number
DMG6968UQ-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
25mOhm Maximum On-Resistance (Rds(on)) at 6.5A, 4.5V
5A Continuous Drain Current (Id) at 25°C
151pF Maximum Input Capacitance (Ciss) at 10V
3W Maximum Power Dissipation at 25°C
N-Channel MOSFET Structure
900mV Maximum Gate Threshold Voltage (Vgs(th)) at 250µA
5nC Maximum Gate Charge (Qg) at 4.5V
Product Advantages
Compact SOT-23-3 package
Low on-resistance for efficient power switching
Wide operating temperature range (-55°C to 150°C)
Suitable for a variety of power management applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 25mOhm @ 6.5A, 4.5V
Continuous Drain Current (Id): 6.5A at 25°C
Input Capacitance (Ciss): 151pF at 10V
Power Dissipation: 1.3W at 25°C
Gate Threshold Voltage (Vgs(th)): 900mV at 250µA
Gate Charge (Qg): 8.5nC at 4.5V
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Standard SOT-23-3 package
Compatible with a variety of power management circuits
Application Areas
Power management
Switching power supplies
Motor control
Battery chargers
General-purpose power switching
Product Lifecycle
Current production part
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact and efficient power switching performance
Low on-resistance for high energy efficiency
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
Proven reliability and compatibility with industry standards