DMG301NU-7 - Diodes Incorporated

Manufacturer Part Number

DMG301NU-7

Manufacturer

Diodes Incorporated

Introduction

The DMG301NU-7 is a single N-channel enhancement-mode field-effect transistor (FET) from Diodes Incorporated, designed for a variety of general-purpose switching and amplification applications.

Product Features and Performance

N-channel enhancement-mode MOSFET

Low on-resistance (Rds(on)) of 4 ohms at 400 mA, 4.5 V

Low gate charge (Qg) of 0.36 nC at 4.5 V

Wide operating temperature range of -55°C to 150°C

Suitable for high-frequency, high-efficiency switching circuits

Product Advantages

Excellent on-state resistance for low power loss

Fast switching characteristics for high-frequency applications

Robust thermal performance allows for high power handling

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 25 V

Gate-to-Source Voltage (Vgs): ±8 V

Continuous Drain Current (Id): 260 mA at 25°C

Input Capacitance (Ciss): 42 pF at 10 V

Power Dissipation (Pd): 320 mW at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering processes

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose switching and amplification

High-efficiency power conversion circuits

Automotive electronics

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Robust thermal and electrical characteristics

Suitable for high-frequency, high-efficiency applications

Compact surface-mount package for efficient board layout