Manufacturer Part Number
DMG3401LSN-7
Manufacturer
Diodes Incorporated
Introduction
This product is a discrete semiconductor device, specifically a P-channel MOSFET transistor.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Drain-to-Source Voltage (Vdss) of 30V
Gate-to-Source Voltage (Vgs) of ±12V
On-State Resistance (Rds On) of 50mOhm @ 4A, 10V
Continuous Drain Current (Id) of 3A at 25°C
Input Capacitance (Ciss) of 1326pF @ 15V
Power Dissipation (Max) of 800mW at 25°C
Product Advantages
Low on-state resistance for efficient power switching
Wide temperature range for use in various applications
Small package size (SC-59-3) for compact design
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold Voltage (Vgs(th)) of 1.3V @ 250A
Gate Charge (Qg) of 25.1nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with various electronic circuits and systems that require a P-channel MOSFET transistor
Application Areas
Power management circuits
Switching regulators
Motor control applications
General-purpose electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer or other suppliers.
Key Reasons to Choose This Product
Efficient power switching performance with low on-state resistance
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Compliance with RoHS3 standards for environmentally-friendly use