Manufacturer Part Number
DMG3404L-7
Manufacturer
Diodes Incorporated
Introduction
N-channel enhancement mode field-effect transistor (MOSFET) in a SOT-23-3 package.
Product Features and Performance
30V drain-to-source voltage
2A continuous drain current at 25°C
25mΩ maximum on-resistance at 5.8A, 10V
641pF maximum input capacitance at 15V
780mW maximum power dissipation at 25°C
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Low on-resistance for low conduction losses
High current handling capability
Small footprint SOT-23-3 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25mΩ @ 5.8A, 10V
Continuous Drain Current (Id): 4.2A @ 25°C
Input Capacitance (Ciss): 641pF @ 15V
Power Dissipation (Pd): 780mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Can be used in a variety of switching power supply, motor control, and other high-frequency, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Amplifiers
General purpose switching
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-size ratio with low on-resistance and high current handling in a compact SOT-23-3 package
Suitable for high-frequency, high-efficiency switching applications due to low input capacitance and fast switching characteristics
RoHS3 compliant for use in environmentally-conscious designs
Wide operating temperature range up to 150°C for reliable operation in harsh environments