DMG2307L-7 - Diodes Incorporated

Manufacturer Part Number

DMG2307L-7

Manufacturer

Diodes Incorporated

Introduction

The DMG2307L-7 is a P-channel enhancement-mode MOSFET from Diodes Incorporated, designed for a variety of power management applications.

Product Features and Performance

30V Drain-Source Voltage (Vdss)

±20V Gate-Source Voltage (Vgs)

90mΩ On-Resistance (Rds(on)) at 2.5A, 10V

5A Continuous Drain Current (Id) at 25°C

3pF Input Capacitance (Ciss) at 15V

760mW Power Dissipation (Pd) at 25°C

P-Channel Enhancement-Mode MOSFET

Product Advantages

Low on-resistance for efficient power delivery

Wide operating temperature range (-55°C to 150°C)

Small SOT-23-3 surface-mount package

Key Technical Parameters

Vdss: 30V

Vgs(max): ±20V

Rds(on) (max): 90mΩ @ 2.5A, 10V

Id (continuous): 2.5A @ 25°C

Ciss (max): 371.3pF @ 15V

Pd (max): 760mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

Compatible with a wide range of electronic devices and power management circuitry

Application Areas

Power management

Battery charging and discharging

LED driving

Motor control

General-purpose switching

Product Lifecycle

Currently in production

Replacement and upgrade options available from the manufacturer

Key Reasons to Choose

Excellent performance-to-size ratio with low on-resistance

Wide operating temperature range for versatile applications

Small footprint and surface-mount packaging for compact designs

RoHS3 compliance for use in environmentally-conscious applications