Manufacturer Part Number
DMG2305UXQ-7
Manufacturer
Diodes Incorporated
Introduction
P-Channel Enhancement Mode MOSFET Transistor
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Low on-resistance of 52 mOhm @ 4.2 A, 4.5 V
Continuous drain current of 4.2 A at 25°C
Input capacitance of 808 pF @ 15 V
Gate charge of 10.2 nC @ 4.5 V
Power dissipation of 1.4 W at 25°C
Product Advantages
Efficient power switching
Compact surface mount package
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate to Source Voltage (Vgs): ±8 V
Threshold Voltage (Vgs(th)): 900 mV @ 250 µA
On-Resistance (Rds(on)): 52 mOhm @ 4.2 A, 4.5 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive-grade qualification
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive electronics
Industrial power supplies
General-purpose switching
Product Lifecycle
Currently in production, no plans for discontinuation. Replacements and upgrades may be available.
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust automotive-grade quality
Compact and easy to integrate
Wide operating temperature range
Cost-effective solution for power switching applications