DJT4031N-13 - Diodes Incorporated

Manufacturer Part Number

DJT4031N-13

Manufacturer

Diodes Incorporated

Introduction

This product is a discrete bipolar junction transistor (BJT) with an NPN configuration.

Product Features and Performance

Capable of operating at high power levels up to 1.2 W

Designed to withstand high collector-emitter voltages up to 40 V

Supports high collector currents up to 3 A

Exhibits low collector-emitter saturation voltage of 300 mV at 3 A

Provides a minimum current gain (hFE) of 200 at 1 A and 1 V

Product Advantages

Robust design for high-power applications

Efficient performance with low saturation voltage

Reliable operation across wide temperature range (-55°C to 150°C)

Key Technical Parameters

Power Rating: 1.2 W

Collector-Emitter Breakdown Voltage: 40 V

Collector Current (Max): 3 A

Collector Cutoff Current: 100 nA

Transition Frequency: 105 MHz

Quality and Safety Features

RoHS3 compliant for environmentally-friendly use

Packaged in industry-standard SOT-223-3 surface mount configuration

Compatibility

Suitable for a variety of high-power electronic applications

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Motor control

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and available for purchase.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Robust high-power handling capabilities

Efficient performance with low saturation voltage

Wide operating temperature range for reliable operation

Compact and easy-to-integrate surface mount package

RoHS3 compliance for environmentally-conscious design