DJT4030P-13 - Diodes Incorporated

Manufacturer Part Number

DJT4030P-13

Manufacturer

Diodes Incorporated

Introduction

High-performance PNP bipolar junction transistor (BJT) suitable for various power amplifier, switching, and general-purpose applications.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

High power rating of 1.2 W

Breakdown voltage (VCEO) of 40 V

Collector current (IC) of up to 3 A

Transition frequency (fT) of 150 MHz

Optimized for high-frequency, high-current applications

Product Advantages

Excellent thermal management due to the TO-261-4 package

Reliable and robust design

Suitable for high-power, high-frequency circuits

RoHS-compliant for environmentally-friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Collector Current (IC): 3 A

DC Current Gain (hFE): 200 min. @ 1 A, 1 V

Transition Frequency (fT): 150 MHz

Power Dissipation (PD): 1.2 W

Quality and Safety Features

Fully compliant with RoHS3 directive

Reliable and durable construction

Extensive quality control and testing procedures

Compatibility

Compatible with a wide range of electronic circuits and systems

Suitable for use in power amplifiers, switches, and general-purpose applications

Application Areas

Power amplifiers

Switching circuits

Motor control

Industrial electronics

Automotive electronics

Product Lifecycle

Currently in active production

No discontinuation plans announced

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

High-performance characteristics for demanding applications

Robust and reliable design for long-term use

Excellent thermal management and power handling capabilities

Compatibility with a wide range of electronic systems

RoHS compliance for environmentally-friendly use