Manufacturer Part Number
PMBT3906,215
Manufacturer
NXP Semiconductors
Introduction
Discrete Semiconductor Products
Transistors Bipolar (BJT) Single
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Max: 250 mW
Voltage Collector Emitter Breakdown (Max): 40 V
Current Collector (Ic) (Max): 200 mA
Current Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency Transition: 250MHz
Product Advantages
Automotive, AEC-Q101 qualified
Surface Mount packaging
Key Technical Parameters
Manufacturer's packaging: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Quality and Safety Features
Automotive, AEC-Q101 qualified
Compatibility
Surface Mount mounting
Application Areas
Automotive and industrial applications
Product Lifecycle
No information on discontinuation or replacements/upgrades
Several Key Reasons to Choose This Product
Automotive and industrial qualification
Compact surface mount package
High power and frequency performance