Manufacturer Part Number
BC857CT-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Transistor, Bipolar Junction Transistor (BJT), PNP Type
Product Features and Performance
Operates in -55°C to 150°C temperature range
Maximum Power Rating of 150 mW
Maximum Collector-Emitter Breakdown Voltage of 45 V
Maximum Collector Current of 100 mA
Low Collector-Emitter Saturation Voltage of 650 mV @ 5 mA, 100 mA
High DC Current Gain (hFE) of 420 min @ 2 mA, 5 V
High Transition Frequency of 100 MHz
Product Advantages
Robust and reliable performance in a wide temperature range
Efficient power handling capability
Suitable for high-speed switching and amplification applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 45 V
Collector Current: 100 mA
Collector Cutoff Current: 15 nA
DC Current Gain: 420 min
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant
Housed in a compact SOT-523 surface mount package
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
Switching and amplification circuits
Audio and video equipment
Telecommunication systems
Industrial control and automation
Product Lifecycle
Currently in active production
Replacement and upgrade options available
Key Reasons to Choose
Exceptional performance in temperature extremes
Efficient power handling for high-current applications
High-speed switching and amplification capabilities
Compact and compatible surface mount package
Reliable and RoHS-compliant design