BC857CE6327HTSA1 - Infineon Technologies

Manufacturer Part Number

BC857CE6327HTSA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

ROHS3 Compliant

PG-SOT23 Package

Operating Temperature: 150°C (TJ)

Power Rating: 330 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current: 100 mA

Collector Cutoff Current: 15 nA (ICBO)

Collector-Emitter Saturation Voltage: 650 mV @ 5 mA, 100 mA

DC Current Gain (hFE): 420 min @ 2 mA, 5 V

Transition Frequency: 250 MHz

Product Advantages

Compact surface mount package

High power and voltage handling capability

Low collector cutoff current

Good DC current gain and high-frequency performance

Key Technical Parameters

Bipolar Transistor Type: PNP

Package: TO-236-3, SC-59, SOT-23-3

Packaging: Tape & Reel (TR)

Quality and Safety Features

ROHS3 Compliant

Compatibility

Suitable for a wide range of electronic circuit applications

Application Areas

General-purpose amplifier and switch applications

Audio and radio frequency (RF) circuits

Power management circuits

Product Lifecycle

Currently available, no known plans for discontinuation

Replacement or upgrade options may be available from Infineon or other manufacturers

Key Reasons to Choose This Product

Robust performance in a compact package

Suitable for a variety of electronic circuit designs

Reliable and RoHS-compliant

Readily available from Infineon and its distribution channels