BC857CLT1G - onsemi

Manufacturer Part Number

BC857CLT1G

Manufacturer

onsemi

Introduction

The BC857CLT1G is a discrete PNP bipolar junction transistor (BJT) from onsemi, designed for a wide range of applications.

Product Features and Performance

PNP bipolar transistor

Operating temperature range: -55°C to 150°C

Power rating: 300 mW

Collector-emitter breakdown voltage: 45 V

Collector current (max): 100 mA

Collector cutoff current (max): 15 nA

Collector-emitter saturation voltage (max): 650 mV

DC current gain (min): 420

Transition frequency: 100 MHz

Product Advantages

Wide operating temperature range

High power rating

Low collector cutoff current

Low collector-emitter saturation voltage

High DC current gain

High transition frequency

Key Technical Parameters

Transistor type: PNP bipolar junction transistor

Package: SOT-23-3 (TO-236)

Mounting type: Surface mount

Quality and Safety Features

RoHS3 compliant

Manufacturer's packaging: Tape and reel

Compatibility

Compatible with a wide range of electronic circuits and applications requiring a PNP bipolar transistor.

Application Areas

Amplifier circuits

Switching circuits

Biasing circuits

General-purpose electronic applications

Product Lifecycle

The BC857CLT1G is an active and widely available product from onsemi.

Replacement or upgrade options may be available, but the BC857CLT1G remains a commonly used and supported transistor.

Several Key Reasons to Choose This Product

Wide operating temperature range

High power rating and low saturation voltage for efficient performance

High DC current gain and transition frequency for reliable operation

RoHS3 compliance and tape and reel packaging for ease of use

Widespread compatibility and availability make it a versatile choice for many applications.