Manufacturer Part Number
BC857CWT1G
Manufacturer
onsemi
Introduction
This is a single PNP bipolar junction transistor (BJT) from onsemi. It is designed for general-purpose amplifier and switching applications.
Product Features and Performance
Operates at a maximum collector-emitter voltage of 45V
Capable of handling a maximum collector current of 100mA
Exhibits a typical DC current gain (hFE) of 420 at 2mA, 5V
Offers a transition frequency of 100MHz
Rated for operating temperatures from -55°C to 150°C
Product Advantages
Compact surface-mount package (SC-70, SOT-323)
Suitable for a wide range of low-power amplifier and switching applications
Robust design with high voltage and current handling capabilities
High current gain and transition frequency for efficient performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 45V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance within the specified temperature range (-55°C to 150°C)
Manufactured in a certified quality management system
Compatibility
Suitable for surface mount applications
Tape and reel packaging for automated assembly
Application Areas
General-purpose amplifier and switching applications
Low-power analog and digital circuits
Consumer electronics, industrial, and automotive applications
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Compact and reliable surface-mount package
Excellent voltage and current handling capabilities
High current gain and transition frequency for efficient performance
Wide operating temperature range for diverse applications
RoHS3 compliance for environmentally-conscious design
Compatibility with automated surface mount assembly processes