Manufacturer Part Number
CY7C1041G30-10BVXIT
Manufacturer
Infineon Technologies
Introduction
The CY7C1041G30-10BVXIT is a high-performance, low-power Asynchronous SRAM memory device with a capacity of 4Mbit. It is designed for a wide range of applications, including consumer electronics, industrial automation, and telecommunications equipment.
Product Features and Performance
4Mbit memory capacity
256K x 16 memory organization
Asynchronous SRAM technology
Parallel memory interface
10ns write cycle time (word, page)
10ns access time
2V to 3.6V supply voltage range
Operating temperature range of -40°C to 85°C
Product Advantages
High-speed performance with low power consumption
Reliable and robust design for industrial and harsh environments
Flexible memory interface to support diverse system requirements
Wide operating temperature range for versatile applications
Key Reasons to Choose This Product
Proven reliability and quality from a trusted semiconductor manufacturer
Excellent performance-to-power ratio for power-sensitive applications
Comprehensive product support and long-term availability
Compatibility with a wide range of system designs
Quality and Safety Features
Rigorous quality control and testing procedures
Compliance with industry-standard safety and environmental regulations
Compatibility
The CY7C1041G30-10BVXIT is compatible with a wide range of electronic systems and devices that require high-performance, low-power SRAM memory.
Application Areas
Consumer electronics (e.g., mobile devices, digital cameras)
Industrial automation and control systems
Telecommunications equipment
Embedded systems and IoT devices
Product Lifecycle
The CY7C1041G30-10BVXIT is an active and currently available product. There are no known plans for discontinuation at this time. However, customers are advised to check with our website's sales team or their authorized distributors for the latest product status and availability information.