Manufacturer Part Number
BAT15099E6433HTMA1
Manufacturer
Infineon Technologies
Introduction
The BAT15099E6433HTMA1 is a high-performance Schottky diode with two independent diodes in a single package. It is designed for use in RF and microwave applications, providing excellent high-frequency performance and low power consumption.
Product Features and Performance
Schottky diode type with two independent diodes
Peak reverse voltage of 4V
Maximum forward current of 110mA
Low capacitance of 0.35pF at 0V, 1MHz
Power dissipation up to 100mW
Operating temperature range of -40°C to +150°C
Product Advantages
High-frequency performance for RF and microwave applications
Low power consumption
Compact and space-saving package
Reliable and robust design
Key Reasons to Choose This Product
Exceptional high-frequency performance for demanding RF applications
Efficient power handling and low power consumption
Versatile and adaptable design for various circuit configurations
Trusted Infineon quality and reliability
Quality and Safety Features
Robust and reliable construction
Stringent quality control measures
Compliance with industry standards and regulations
Compatibility
Suitable for a wide range of RF and microwave circuit designs
Compatible with various electronic systems and applications
Application Areas
RF and microwave circuits
Wireless communication systems
Radar and satellite communications
Test and measurement equipment
Industrial and consumer electronics
Product Lifecycle
The BAT15099E6433HTMA1 is an active product. There are no known equivalent or alternative models available at this time. For the latest product information or to inquire about availability, please contact our website's sales team.