Manufacturer Part Number
BAT1503WE6327HTSA1
Manufacturer
Infineon Technologies
Introduction
The BAT1503WE6327HTSA1 is a high-performance Schottky diode from Infineon Technologies. It is designed for use in a wide range of RF and microwave applications, offering excellent performance characteristics and superior reliability.
Product Features and Performance
Schottky diode for RF and microwave applications
Peak reverse voltage of 4V
Maximum forward current of 110mA
Extremely low junction capacitance of 0.35pF at 0V, 1MHz
Excellent power dissipation capability of 100mW
Operating temperature range up to 150°C (TJ)
Packaged in the compact SC-76 (SOD-323) surface-mount package
Product Advantages
High-frequency operation
Low power consumption
Compact and space-saving design
Robust and reliable performance
Key Reasons to Choose This Product
Superior RF and microwave performance
Efficient power handling
Excellent thermal management
Trusted Infineon Technologies quality and reliability
Quality and Safety Features
Rigorous quality control and testing
RoHS-compliant and environmentally friendly
Compatibility
The BAT1503WE6327HTSA1 is compatible with a wide range of RF and microwave circuit designs, making it suitable for use in various applications.
Application Areas
Wireless communication systems
Radar and satellite communication
Power amplifiers
Mixers and switches
Instrumentation and test equipment
Product Lifecycle
The BAT1503WE6327HTSA1 is an active product, and there are no immediate plans for discontinuation. However, customers are advised to contact our website's sales team for the latest information on product availability and potential alternative models.