Manufacturer Part Number
BAT15-099R
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products
RF Diodes
Product Features and Performance
Schottky diode with 2 pairs of common cathode
Low capacitance of 0.5pF at 0V and 1MHz
Peak reverse voltage of 4V
Maximum current of 110mA
Operating temperature up to 150°C
Product Advantages
Compact TO-253-4/TO-253AA package
Suitable for high-frequency applications
Low power dissipation of 100mW
Key Technical Parameters
Package: PG-SOT143
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100 mW
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage Peak Reverse (Max): 4V
Current Max: 110 mA
Quality and Safety Features
Reliable Schottky diode design
Suitable for high-temperature environments
Compatibility
Compatible with various high-frequency circuit designs
Application Areas
Suitable for high-frequency applications
Applicable in RF circuits, mixers, detectors, and switches
Product Lifecycle
Currently available from the manufacturer
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Compact and space-saving package
Excellent high-frequency performance
High operating temperature capability
Low power dissipation
Reliable Schottky diode technology
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