BAT15-099R - Infineon Technologies

Manufacturer Part Number

BAT15-099R

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Products

RF Diodes

Product Features and Performance

Schottky diode with 2 pairs of common cathode

Low capacitance of 0.5pF at 0V and 1MHz

Peak reverse voltage of 4V

Maximum current of 110mA

Operating temperature up to 150°C

Product Advantages

Compact TO-253-4/TO-253AA package

Suitable for high-frequency applications

Low power dissipation of 100mW

Key Technical Parameters

Package: PG-SOT143

Operating Temperature: 150°C (TJ)

Power Dissipation (Max): 100 mW

Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz

Voltage Peak Reverse (Max): 4V

Current Max: 110 mA

Quality and Safety Features

Reliable Schottky diode design

Suitable for high-temperature environments

Compatibility

Compatible with various high-frequency circuit designs

Application Areas

Suitable for high-frequency applications

Applicable in RF circuits, mixers, detectors, and switches

Product Lifecycle

Currently available from the manufacturer

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Compact and space-saving package

Excellent high-frequency performance

High operating temperature capability

Low power dissipation

Reliable Schottky diode technology