BAT1504WH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BAT1504WH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

The BAT1504WH6327XTSA1 from Infineon Technologies is an RF Schottky diode ideal for high-frequency applications.

Product Features and Performance

RF Schottky diode type: 1 Pair Series Connection

High breakdown voltage: Peak Reverse 4V

Low leakage current and high reliability

High operating temperature up to 150°C (TJ)

Low capacitance: 0.35pF @ 0V, 1MHz

Compact package: SC-70, SOT-323

Product Advantages

Excellent high-frequency operation

Robust thermal performance for increased durability

Reduced power loss with low forward voltage

Key Technical Parameters

Voltage Peak Reverse (Max): 4V

Current Max: 110 mA

Power Dissipation (Max): 100 mW

Operating Temperature: 150°C (TJ)

Quality and Safety Features

High-temperature operation reliability

Constructed to mitigate power inefficiencies

Stringent manufacturing standards ensuring product robustness

Compatibility

Compatible with Surface Mount Technology (SMT) on SC-70, SOT-323 package

Application Areas

RF signal detection

Voltage clamping

Protection circuit applications

Mixers and detectors in RF design

Product Lifecycle

Currently active with good production volume

Not nearing discontinuation

Availability of replacements or upgrades to be confirmed from manufacturers

Several Key Reasons to Choose This Product

High-temperature tolerance ensuring effective performance in extreme conditions

Superior RF performance suitable for high-frequency applications

Low capacitance feature enhancing the response time

Compact and reliable design suitable for automated assembly processes

Supported by Infineon Technologies, a leader in semiconductor solutions