Manufacturer Part Number
BAT1504WH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BAT1504WH6327XTSA1 from Infineon Technologies is an RF Schottky diode ideal for high-frequency applications.
Product Features and Performance
RF Schottky diode type: 1 Pair Series Connection
High breakdown voltage: Peak Reverse 4V
Low leakage current and high reliability
High operating temperature up to 150°C (TJ)
Low capacitance: 0.35pF @ 0V, 1MHz
Compact package: SC-70, SOT-323
Product Advantages
Excellent high-frequency operation
Robust thermal performance for increased durability
Reduced power loss with low forward voltage
Key Technical Parameters
Voltage Peak Reverse (Max): 4V
Current Max: 110 mA
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Quality and Safety Features
High-temperature operation reliability
Constructed to mitigate power inefficiencies
Stringent manufacturing standards ensuring product robustness
Compatibility
Compatible with Surface Mount Technology (SMT) on SC-70, SOT-323 package
Application Areas
RF signal detection
Voltage clamping
Protection circuit applications
Mixers and detectors in RF design
Product Lifecycle
Currently active with good production volume
Not nearing discontinuation
Availability of replacements or upgrades to be confirmed from manufacturers
Several Key Reasons to Choose This Product
High-temperature tolerance ensuring effective performance in extreme conditions
Superior RF performance suitable for high-frequency applications
Low capacitance feature enhancing the response time
Compact and reliable design suitable for automated assembly processes
Supported by Infineon Technologies, a leader in semiconductor solutions
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